Время на поиск затрачено меньше чем время на написание этого поста.
75A, 55V, 0.009 Ohm, N-Channel UltraFET
Features
Power MOSFETs
• 75A, 55V
These N-Channel power MOSFETs
• Simulation Models
are manufactured using the
in
- Temperature Compensating PSPICE® and SABER™
novative UltraFET® process. This
Models
advanced process technology
- Thermal Impedance PSPICE™ and SABER Models
achieves the lowest possible on-resistance per silicon area,
Available on the WEB at:
www.fairchildsemi.com
resulting in outstanding performance. This device is capable
of
• Peak Current vs Pulse Width Curve
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
• UIS Rating Curve
charge. It was designed for use in applications where power
efficiency
• Related Literature
is important, such as switching regulators,
switching converters
- TB334, “Guidelines for Soldering Surface Mount
, motor drivers, relay drivers, low-
voltage
Components to PC Boards”
bus switches, and power management in portable
and battery operated products.
Symbol
Formerly developmental type TA75343.
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
G
HUF75343G3
TO-247
75343G
HUF75343P3
TO-220AB
75343P
S
HUF75343S3S
TO-263AB
75343S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.